Title: The study of processes of population the excitation states of atom neon NeI configuration in the He-Ne plasma
Author: бонд
Last saved by: МВидео
Company: SPbGU

Specialization: 010700/04  Physics of Semiconductors. Microelectronics.
Program: 31 Physics of semiconductors and dielectrics.
Program manager: Prof. P.P. Konorov.
Department of Solid State Electronics.
Scientific adviser: Prof., Dr. A.P. Baraban.
Reviewer: Dr. E. A. Denisov.

Optically active centers in SiO2 layers on silicon related with oxygen-deficient.
V. P. Bondarenko.

The goal of this research was to establish possibilities of luminescent methods for the detection of Si-SiO_2 structures of oxygen-deficient defects (ODC) and the determine their concentrations change as a result of external influences degradation. The following problems was solved:
1.	The fundamental comparative studies of the processes of the intrinsic luminescence of silicon-insulator structures were conducted by methods cathode-, photo- and electroluminescence.
2.	The spectral distribution of the luminescence of Si-SiO_2 structures were analyzed by fitting a set of Gaussian distributions.
3.	The additional information about the processes of luminescence in SiO_2 layers on silicon were derived on the basis of joint analysis of the types of spectral distributions obtained by different luminescent methods.
4.	The sensitivity of used luminescent methods were revealed to the presence of ODC in the oxide layers on silicon.

The list of the publications
1.	BarabanA. P., Bondarenko A. S., Bondarenko V. P., PetrovYu. V., Timofeeva K. A. Luminescence peculiarities of SiO2 layers on silicon in UV spectrum range. / / Vestn. St. Petersburg. University. Sor. 4. , 2011. No. 2, p. 29-34.