Specialization: 010700  «Applied Physics and Mathematics»
Program: 39  «Physics of Semiconductors and Optoelectronic»
Head of the program: prof. B.V. Novikov
Department of Solid State Physics
Scientific adviser: Prof. V. F. Agekyan
Reviewer: 

High-power semiconductor laser with internal high-order reflection diffraction grating
Zolotarev Vasily

This paper deals with application high-order reflection diffraction grating to narrow spectra of high-power semiconductor laser. Diffraction grating placing in emitter of diode laser structure provides feedback for waveguide mode as a spectral selective mirror. Theoretical calculations of the reflection spectra for different geometrical shapes of diffraction grating were carried out. On basis of performed calculations the prototype of diode laser with internal diffraction grating was formed from double heterostructure . The wavelength of laser generation was 1060 nm. The technology of photolithography and reactive ion etching was used to make diffraction grating. Plots of spectra, optical power vs current and bias vs current were obtained. To develop optical properties of prototype facet were antireflection coated. For final prototype width of spectra was 3 Å and 800 mW optical power in CW mode.
Summury:
1)	The possibility of using the internal diffraction grating for the selection of longitudinal modes of laser cavity was shown.
2)	Reflection spectra of different geometrical shape diffraction grating were calculate.
3)	On basis of performed calculations the prototype were made. Spectral and powerful features were measured. 
The list of the publication
1.	V.V. Vasil’eva, D.A. Vinokurov, V.V. Zolotarev, A.Yu. Leshko, A.N. Petrunov, N.A. Pikhtin, M.G. Rastegaeva, Z.N. Sokolova, I.S. Shashkin, I.S. Tarasov. Semiconductors, 46, 252 (2012)
2.	V.V. Zolotarev «Internal high-order reflection diffraction grating in high-power semiconductors laser » 13th National Youth Conference on the Physics of semiconductors and nanostructures, semiconductor opto-and nanoelectronics. Abstracts.
3.	V.V. Zolotarev, A.Yu. Leshko, A.V. Lyutetskiy, D.N. Nikolaev, N.A. Pikhtin, A.A. Podoskin, S.O. Slipchenko, Z.N. Sokolova, V.V. Shamahov, I.N. Arsentyev, L.S. Vavilova, K.V. Bakhalov, I.S. Tarasov «Semiconductor laser with internal selectivity of emission », Semiconductors, in print.