Main field of study:  011200 Physics
Area of specialization: Electronics of Nanosystems
Department of Electronics of Solid State
Scientific advisor: Prof. E.O. Filatova
Reviewer: Prof. A.C. Shulakov

Mutual influence of the gate and blocking layer materials on electronic atomic characteristics of their interface in flash memory cells 
M.A. Konyushenko

The electronic atomic structure of the films of different modifications of Al2O3 (α-, γ-, am-) and the mutual influence of the metal gate TiN and blocking layer γ-Al2O3 on their electronic atomic characteristics and their interface were studied. It was established: 1) the main change in the value of the band gap of the different modifications of Al2O3 originates as a result of shift of valence band top; 2) growing of the gate TiN on γ-Al2O3-film increases the number of oxygen vacancies in the film due to insignificant diffusion of oxygen atoms from the film into the gate; 3) there is a strong oxidation of the TiN, followed by the formation of a complex matrix and molecular N2; 4) incorporation of oxygen ions into the TiN matrix leads to a distortion of the octahedra and the formation of the polarization layer with the selected direction of the electric moment.

The list of the publications
1. M. A. Konyushenko, A. S. Konashuk, A. A. Sokolov, F. Schafers, E. O. Filatova. Effect of thermal annealing and Al2O3-interlaer on intermixing in the TiN/SiO2/Si structure // Journal of Electron Spectroscopy and Related Phenomena. 196. 2014. P. 117-120.
2. E. O. Filatova, A. P. Baraban, A. S. Konashuk, M. A. Konyushenko, A. A. Selivanov, A. A. Sokolov, F. Schafers and V. E. Drozd. Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies // New Journal of Physics. 16. 2014. P. 113014.
3. M. A. Konyushenko, A. S. Konashuk, A. A. Sokolov, F. Schaefers, E. O. Filatova. Influence of annealing conditions on γ-Al2O3 crystallization // Book of Abstracts - 15th European Conference on Applications of Surface and Interface Analysis (ECASIA-2013) - October 13-18, 2013, Sardinia, Italy, P. 324.
4. M. A. Konyushenko, A. S. Konashuk, E. O. Filatova. X-ray reflection spectroscopy study of Al2O3-based heterostructures // Book of Abstracts  VUVX-2013: 38th International Conference on International conference on Vacuum Ultraviolet and X-ray Physics – July 12-19, 2013, Herey, China, P. 178.  
5. M. A. Konyushenko, A. S. Konashuk, E. O. Filatova. NEXAFS study of the heterostructures based on nanolayers of the Al2O3 // Book of Abstracts - Russian conference “X-ray and Electronic Spectra and Chemical Bonding” (RESCB-21) – October 7-11, 2013, Novosibirsk, Russia, P. 85. 
6. Marina Konyushenko. X-ray reflectometry study of Al2O3-based heterostructures // Book of Abstracts - International Student Conference Science and Progress-2013 – September 30 – October 4, 2013, Saint-Petersburg, Russia, P. 44.
7. M.A. Konyushenko. Influence of annealing treatment on structure of Al2O3-films used as blocking layer for non-volatile memories // Book of Abstracts - International Student Conference Science and Progress-2012 – November 12-16, 2012, Saint-Petersburg, Russia, P. 78.
8. M. A. Konyushenko, A. S. Konashuk, A. A. Sokolov, F. Schaefers, E. O. Filatova. NEXAFS study of opened and buried Al2O3 layers // Book of Abstracts - the Fifth Joint BER II and BESSY II User Meeting – December 4-6, 2013, Berlin, Germany, P. 91 
9. A. S. Konashuk, M. A. Konyushenko, A. A. Sokolov, F. Schaefers, E. O. Filatova. Chemical bonding of porous SiO2-based low-k dielectrics // Book of Abstracts - the Fifth Joint BER II and BESSY II User Meeting – December 4-6, 2013, Berlin, Germany, P. 91. 
10 E. O. Filatova, A. S. Konashuk, M. A. Konyushenko, A. A. Sokolov, V. E. Drozd. X-ray spectroscopic study of ALD transition-metal oxides films // Book of Abstracts - the 12th International Baltic ALD conference – May 12-13, 2014, Helsinki, Finland, P. 119.
11. E. O. Filatova, M. A. Konyushenko, A. S. Konashuk, A. A. Selivanov, V. E. Drozd, A. P. Baraban. Memristive switching in metal/TiO2/IL/metal nanostructures // Book of Abstracts - the 30th Syposium “Memristor materials, mechanisms and devices for unconventional computing” – May 26-30, 2014, Lille, France, P. S.9 9.
12. E. O. Filatova, A. P. Baraban, A. S. Konashuk, M. A. Konyushenko, A. A. Selivanov, A. A. Sokolov, F. Schaefers, V. E. Drozd. Transparent-conductive-oxide (TCO) buffer layer effect on resistive switching process in metal/TiO2/TCO/metal assemblies // Book of Abstracts - the 6th Joint BER II and BESSY II User Meeting – December 3-5, 2014, Berlin, Germany, P. 55. 
13. M. A. Konyushenko, A. S. Konashuk. X-ray spectroscopic study of oxygen scavenging from γ-Al2O3-film depending on material of top electrode and its annealing // Book of Abstracts - International Student Conference Science and Progress-2014 – November 10-14, 2014, Saint-Petersburg, Russia, P. 78.