Main field of study: 011200 Physics
Area of specialization: Physics of Semiconductors and Insulators
Department of Electronics of Solid State
Scientific advisor: Prof. A.P. Baraban
Reviewer: Docent E.A. Denisov

Resistive switching properties in titanium oxide films
A.A. Selivanov

The resistive switching that occurs in a thin film of titanium oxide when a sufficient potential difference is applied was studied. The main purpose of the work was to determine the optimum operating parameters of the memristor as a memory element.
The following results were obtained:
1. To observe the repeatable reversible resistive switching the electroforming process is required.
2. As a result of forming process, oxygen vacancies and their complexes are created, providing the conductivity in the RH (high resistanc) and RL (low resistance) states, presumably, by the mechanism of Poole-Frenkel.
3. The main reason for degradation of the researched structures is self-heating caused by current flow.

The list of the publications
1. А.П. Барабан, А.А. Гаджала, В.А. Дмитриев, В.Е. Дрозд, И.О. Никифорова, Ю.В. Петров, В.А. Прокофьев, А.А. Селиванов. Структуры с управляемым сопротивлением, формируемые методом Молекулярного Наслаивания// Вестник СПбГУ. Серия 4: физика, химия. С.-Петербург, 2013. С. 42-47.
2. A.P. Baraban, A.A. Selivanov, A.S. Konashuk, V.E. Drozd, E.O. Filatova. Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory// Book of Abstracts-12th International Baltic ALD conference – May 12-13, 2014 Helsinki, Finland. P. 40.
3. E.O. Filatova, M.A. Konyushenko, A.S. Konashuk, A.A. Selivanov, V.E. Drozd, A.P. Baraban. Memristive switching in metal/TiO2/IL/metal nanostructures// Book of Abstracts- 2014 Spring Meeting Lille, France – May 26-30. P. S.9 9.
4. E.O. Filatova, A.P. Baraban, A.S. Konashuk, M.A. Konyushenko, A.A. Selivanov, A.A. Sokolov, F. Schaefers, V.E. Drozd. Transparent-conductive-oxide (TCO) buffer layer effect on resistive switching process in metal/TiO2/TCO/metal assemblies// New Journal of Physics, 2014. — Vol. 16, — P. 113014_1-15.
5. А.П. Барабан, В.Е. Дрозд, А.С. Конашук, А.А. Селиванов, Е.О. Филатова. Мемристор на основе двухслойной структуры с оксидом титана// Материалы XIII международной конференции «Физика диэлектриков» (Диэлектрики 2014) – 2-6 июня, 2014 С.-Петербург, Россия. T. 1, С. 153-156.